ace 230 2 b n - channel enhancement mode mosfet ver 1.2 1 description the ACE2302B uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v while retaining a 12v v gs(max) rating. this device is suitable for use as a uni - directional or bi - directional load switch. features ? v ds =20v ? i d =6a (v gs =10v) ? r ds(on) =26 m (typ.) @ v gs =10v ? r ds(on) = 28 m (typ.) @ v gs =4.5v ? r ds(on) = 42 m (typ.) @ v gs = 2 .5v absolute maximum ratings parameter symbol max unit drain - source voltage v dss 2 0 v gate - source voltage v gss 12 v drain current ( continuous ) t a =25 i d 6 a t a = 70 4.8 drain current ( pulsed ) i d m 20 a power dissipation t a =25 p d 1.4 w operating temperature / storage temperature t j /t stg - 55~150 packaging type sot - 23 - 3 l 3 1 2 ordering i nformation ace 230 2 b x x + h sot - 23 - 3 l description fun c tion 1 g gate 2 s source 3 d drain b m : sot - 23 - 3l pb - free halogen - free
ace 230 2 b n - channel enhancement mode mo sfet ver 1.2 2 electrical characteristics t a =25 , unless otherwise specified. parameter symbol test conditions min typ max unit static drain - source breakdown voltage v (br)dss v gs =0v, i d =250a 2 0 2 4 v zero gate voltage drain current i dss v ds =2 0 v, v gs = 0v 1 a gate threshold voltage v gs(th) v gs =v ds , i ds =250a 0 . 6 0 . 7 4 1 v gate leakage current i gss v gs = 1 2 v, v ds =0v 100 na drain - source on - state resistance r ds(on) v gs =10v, i d = 6 a 1 9 . 5 2 6 m v gs =4.5v, i d =5a 2 2 . 6 2 8 v gs = 2 .5v, i d = 4 a 3 1 4 2 forward transconductance g fs v d s = 1 0 v, i d = 6 a 5 s diode forward voltage v sd i sd =1 .7 a, v gs =0v 0.7 8 1 v maximum body - diode continuous current i s 1 . 7 a switching total gate charge qg v gs = 4 . 5 v, v ds =1 0 v, i d = 6 a 6 . 3 8 . 1 nc gate - source charge qgs 1 . 7 2 . 2 gate - drain charge qgd 1 . 4 1 . 8 turn - on delay time t d(on) v gs =10v, i d =1a r g =6 , v g s = 4 . 5 v 1 0 . 4 2 0 . 8 ns turn - on rise time tr 4 . 4 8 . 8 turn - off delay time t d(off) 2 7 . 4 5 4 . 8 turn - off fall time tf 4 . 2 8 . 4 dynamic input capacitance ciss v gs =0v, v ds = 8 v, f=1.0mhz 5 2 2 . 3 pf output capacitance coss 9 8 . 5 reverse transfer capacitance crss 7 4 . 7 n ote : 1. the value of r ja is measured with the device mounted on 1in2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. 2 . repetitive rating, pulse width limited by junction temperature. 3 . the current rating is based on the t 10s junction to ambient thermal resistance rating.
ace 230 2 b n - channel enhancement mode mo sfet ver 1.2 3 typical performance characteristics
ace 230 2 b n - channel enhancement mode mo sfet ver 1.2 4 typical performance characteristics
ace 230 2 b n - channel enhancement mode mo sfet ver 1.2 5 packing information sot - 23 - 3 l unit: mm
ace 230 2 b n - channel enhancement mode mo sfet ver 1.2 6 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices o r systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect it s safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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